Transistors

Current in the Transistor

  • The current I_E (Emitter) depends on I_B (Base) and I_C (Collector), being equal to {I_E = I_B + I_C}; this can be approximated to {I_E = I_C}, considering that I_B is basically insignificant when compared to I_C.

  • The current I_C depends on V_CE (Voltage Drop between Collector and Emitter), where V_CE has its value changed based on I_B, via the Beta factor relationship. When the Base "saturates", we will have that V_CE will reach its minimum value, enabling the highest allowed value of I_C.

  • Extreme cases:

    • If {I_B = 0}, this implies that {I_C = 0} and {V_CE = V_CC}, because the circuit will be open (Cut-off).

    • If {I_B = >>}, this implies that {I_C = >>} and {V_CE = 0}, that is, V_CE will be shorted, leaving I_C at its maximum value. This point is called I_C(sat), known as the Saturation Point.

  • Illustration:

    • <excalidraw_not_loaded>
  • Videos:

    • Explanation of the curves that associate I_B, I_C and V_CE: ElectronXLab video .

      • At 13:19  of the video, an example of determining I_B for the Transistor to saturate is shown. 'DC Load Line' is also briefly explained.

    • Calculation of I_B, I_C and V_CE, in addition to drawing the 'DC Load Line' and the 'Q Point': by ElectronXLab  and by ElectronXLab .

      • The 'Q Point' (Quiescent (quiet) Point), is defined as the point of Current I_C and Voltage V_CE when the circuit has no signal; represented as I_CQ and V_CEQ. It can also be said to be the 'Operating Point'.

Voltage in the Transistor

  • The Voltage between the Emitter and the Base will be given by the manufacturing material:

    • Silicon: 0.7 V.

    • Germanium: 0.3 V.

Beta Factor

  • It is a physical characteristic of the Transistor, not of the circuit. It is defined as {Beta = I_E / I_B}.

Transistor Saturation

  • I_B(sat) (Saturation Current) is defined as {I_B(sat) = Beta * I_C(max)}. Any current I_B > I_B(sat) also puts the Transistor in saturation; the only care that must be taken is not to overload the I_BE current, burning the Transistor.

Darlington Transistors

Voltage in the Transistor
  • The Voltage between the Emitter and the Base will be given by the manufacturing material, always being the sum of the Voltage between the '2 Internal BJT Transistors':

    • Silicon: 0.7 * 2 = 1.4 V.

    • Germanium: 0.3 * 2 = 0.6 V.

Current in the Transistor
Beta Factor
  • Beta_D (Darlington's Beta) will depend on Beta_1 and Beta_2 (Beta of the internal BJTs), so that: {Beta_D = Beta_1 * Beta_2 + Beta_1 + Beta_2}; normally the term {Beta_1 + Beta_2} is disregarded, since the contribution of this term in Beta_D is basically insignificant.

  • Example of application with Beta calculation - GVEnsino .

Circuits with Transistors

'Common Emitter' Amplification [?]
'Class A' type Amplification
'Class B' and 'Class AB' type Amplification
  • [I found it confusing] Demonstration and explanations: video .

'Voltage Divider Bias'
'Buffers and Inverters' with Transistors
'Flip Flops' with Transistors
'Toggle Button' with Transistors